IC工艺技术3-刻蚀

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1、IC工艺技术系列讲座第三讲ETCHING刻蚀讲座提要1.General1.1Isotropic/Anisotropicetch(无定向/定向刻蚀)1.2Facility(动力环境)2.Wetetch2.1Wetetchmechanism（湿化刻蚀机理）2.2BOEetch（氧化硅刻蚀)2.3Aluminumetch(铝刻蚀)2.4Nitrideetch(氮化硅刻蚀)2.5Poly/siliconetch(多晶硅/单晶硅刻蚀)2.6DIwaterrinseanddry3.Dryetch3.1PlasmaTheoryandapplication(等离子理论和应用)3.2Typeofp

2、lasmaetch(等离子刻蚀种类)3.3Etchinggasesandpressure(刻蚀气体和低压）3.4Etchprocesshighlight(刻蚀工艺简介)3.5Etchprocessparameter(刻蚀工艺参数)3.6Ionmilling(离子铣)3.7BCDplasmaetchingequipmentandapplication5.Nextetchprocess未来的刻蚀工艺1.1GeneralIsotropicetch(无定向刻蚀)Etchinghasnodirection.Wetetchoraplasmaetchwithoutsidewallpassiva

3、tionprocess.Itcausesundercutduringtheetchingandchangecriticaldimension.Anisotropicetch(定向刻蚀)EtchwithdirectionorsidewallprotectionIonmilling,RIEortheplasmaetchwithenoughsidewallpassivationprocess.Afteretch,criticaldimensionhasnochangeorveryslightlydifference.Isotropicetch(无定向刻蚀)Anisotropicetch

4、(定向刻蚀)Resist1.2FacilityDIwater(去离子水)17mhomDrain(排水)SpecialchemicaldisposesystemExhaust(排风)CompressairandNitrogen(加压空气,氮气)Inhousevacuum(真空管道)Coolingwater(冷却水)Gascabinet/Gasline(气柜,气体管道)Gasbottle(气瓶)2.0WetetchAdvantageanddisadvantageChemicaletch(化学刻蚀）---isotropyCDloss（线宽变小）Highparticlecontamina

5、tion（高颗粒）Unableforsmallgeometry(不能用于小尺寸工艺)Higherprocesscost（工艺费用高）Mostofwetetchprocesshavehighselectivitytotheunderlayer（高选择比）Fastthroughput（产量高）Lowequipment(investment)cost（投资少）2.1.1Wetetchmechanism（湿化刻蚀机理）WafersurfacewettingandcontactwithetchchemicalChemicalreactiontakesplace,solublebyprodu

6、ctformation.RemovebyproductfromwafersurfaceTheetchrate(anduniformity)affectsbyTemperatureThesloweststepofoneofabovestep2.1.2Wetetchbyproduct(副产物)Partofbyproductwillbeconvertedtowatersolublematerial.(水溶性)Partofbyproductwillconvertedtogasform.Ifthegascannotberemovedfromthewafersurfacesoonenough

7、,theproblemwilloccur*Blocketch---snow(雪花)*Hidingatedgeofresist---lifting(浮胶)2.1.3WetetchimprovementImprovementmethodPre-wet---wettingagent（湿润剂）Agitation（搅动）Circulation（循环）Temperaturecontrol（温度控制）Filtration（过滤）Inavacuum（真空）Sprayetch（喷洒）Vaporet