3C-SiC缓冲层对在6H-SiC上生长SiCGe的影响

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1、万方数据西安理工大学硕士学位论文一一一———————————————————————————————————————————————————一EffectsofabufferlayerOnthehetero—epi-growthofSiCGeon6H-SiCSubject：MaterialPhysicsandChemistryDate：Graduatestudent：XujtinAdvisor：ProfessorChenZhimingAbstractSignatureSignature：SiliconCal’bide(SiC)isapromisingsemiconduc

2、tmwithwideband—gap，highsaturationelectrondriftvelocity，hightherrnalconductivityandhighbreakdownelectricfield．However，itsinsensitNitytovisibleorneal·infi‘al’edlightgreatlylimitsitsapplicationinoptoelectronics．BychangingcompositionratioofSieGetel·natyalloycanchangeItSbandgaptomeettheneedsi

3、nopto—electronicapplications．GrowthofSiCGeteInarvalloyfilmon61-t．SiCinaconventionalhot—wallCVDsystemisoriginallystudiedinourgroup．QualityoftilealloyISgreatlyimpactedbythelatticemismatchbetweenthetwomaterials．Howevere，3C．SiCmatchesSiCGewithapropercompositionratioverywell，Therefore，a3C—SiC

4、bufferlayertechnologyistobeemployed10improvethe∥owthqualityofSieGeon6H·SiC．Weplimal‘flydotheseWOl’k：1．IllgrowthofSiCfihn，westudiedsomefactorswhicheffectthequalityofbufferlayer,thesearetemperatulesofsubsh‘ates．，reacttongasflux，gaspl’essureMiengrowingSiCfilm，processoftemperaturedecliningwe

5、studiedthebuffeI’la)，ercrystalstructurebymeansofsmallangleX—raydiffraction(SAXRD)．Optimizedbufl'erlaym‘pl’epal．ationpt’ocess．2．Obsel·vedsurfacemorphologiesofbufferlayersgrownunderdifferenttimebymeansofSEMfirstly．Asglowingtimebecomelongel’thanacertaintime，theroughnessofbufferlayergetsbigg

6、er．Then，observedStlltimetoOl‘phologiesofSiCGetelInal’yalloyfilm91．ownonbufferlayers．Ithasbeenshownthatuseofabuf(ellayercarlimps‘orethegi’owthqualityoftheSiCGeternaryalloytOsomeextent．Ifbufferlayeristoothm．itcarlnotabso,‘bthelatticemis,natchtressgreatlybetweenthefilmandthesubstl’ate，thati

7、SitcannotimprovequalityoftheSiCGeternm’Yalloyeffectively；Ifbufierlayeristoothick，itssurfacegetsrougherandmakesgl·owingS{CGelernal’yalloymODO。crystallinefilmonbufferlayersmoredifficult．Ke3八Vol’ds'SieGe，Hetm‘0-epltaxy，bufferlaye．rSuppo『l‘tedbytheNationalNaturalScienceFounda