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1、PHYSICALREVIEWLETTERSweekendingPRL97,016601(2006)7JULY2006ChemicallyInducedConductanceSwitchinginCarbonNanotubeCircuitsJaanMannik,BrettR.Goldsmith,AlexanderKane,andPhilipG.Collins*DepartmentofPhysicsandAstronomy,UniversityofCaliforniaatIrvine,Irvine,California92697,USA(Received31January2006;
2、published7July2006)ThechemicalreactivityofcarbonnanotubesinH2SO4isinvestigatedusingindividual,single-walledcarbonnanotubes(SWNTs)incorporatedintoelectronicdevices.Exploitingthedeviceconductanceasasensitiveindicatorofchemicalreactions,discreteoxidationandreductioneventscanbeclearlyobserved.Du
3、ringoxidation,aSWNTopenscircuitstoananometer-scaletunneljunctionwithresidualconductionsimilartoFrenkel-Poolechargeemission.Whenelectrochemicallyreduced,aSWNTreturnstoitsoriginalconductance.Thisredoxcyclecanberepeatedmanytimes,suggestinganovelchemicalmethodofreversiblyswitchingSWNTconductivit
4、y.DOI:10.1103/PhysRevLett.97.016601PACSnumbers:72.80.Rj,73.63.Fg,81.16.Pr,82.37.NpThereversibleswitchingofcarbonnanotubeelectricalDevicesusedinthisstudywerefabricatedusingstan-conductanceisbeingextensivelyresearched,inpartduetodardtechniques[12]andthenmodifiedinacustomelectro-thetremendouscom
5、mercialimportanceofhighdensitychemicalcell.First,smalldiameterSWNTsweregrownbymemoryandlogiccircuitry.Traditionalfield-effecttran-chemicalvapordepositionofmethaneat950Cusingsistor(FET)architecturesappliedtosingle-walledcarbonalumina-supportedironnitrates[12]orironkegginmole-nanotubes(SWNTs)h
6、avedemonstratedprototypedevicescules[13]ascatalysts.Tielectrodeswerefabricatedontopwithverycompetitiveelectronicproperties[1].WhileoftheSWNTsusingopticallithographyandallowedtoFETsmayachievethehighestpossibleswitchingratesformapassivatingsurfaceoxide.Someofthedeviceswereandmostreadilyintegra
7、tewithtraditionalelectronics,furthercoatedwithaninsulatinglayerofpolymethylme-SWNTconductivitycanalsobemodulatedbylesscon-thacrylate(PMMA),aneffectiveelectrolytebarrier[14–ventionalmeans.Polymercoatings[2,3],electrochemical16]intowhichsmallwindowsw
