可控硅特性参数.pdf

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1、PhilipsSemiconductorsThyristorsandTriacsRatingsandCharacteristicsThyristorandTriacRatingsdIT/dtThemaximumallowablerateofriseofon-statecurrentaftergatetriggering.ThetheoryAratingisavaluethatestablisheseitheralimitingunderlyingthisratingisthat,wheretherateofcapabilityoralimitingconditio

2、nforanelectronicdevice.riseofmaincurrentisveryrapidimmediatelyItisdeterminedforspecifiedvaluesofenvironmentandaftertriggering,local’hotspot’heatingwilloccuroperation,andmaybestatedinanysuitableterms.inasmallpartofthedeviceactiveareaclosetoLimitingconditionsmaybeeithermaximaorminima.th

3、egate,leadingtodevicedegradationorAlllimitingvaluesquotedinthisdatahandbookarecompletefailure.Inpractice,truedI/dtfailuresTAbsoluteMaximumRatings-limitingvaluesofoperatingofthiskindareveryrare.TheonlyconditionsandenvironmentalconditionsapplicabletoanydeviceofwheredI/dthasbeenobservedt

4、ocausefailuresTaspecifiedtype,asdefinedbyitspublisheddata.isintriacsoperatedinquadrant(iv)(T2-,G+)Theequipmentmanufacturershoulddesignsothat,whereacombinationofhighdIT/dtandhighpeakinitiallyandthroughoutthelifeofthedevice,noabsolutecurrent(inexcessofthedatasheetratings),canmaximumvalu

5、eisexceededwithanydevice,underthecausedamagetothegatestructure.Forthisworstprobableoperatingconditions.reason,operationofourtriacsinquadrantIVshouldbeavoidedwhereverpossible.VoltageratingsVDRM,Repetitivepeakoff-statevoltage.ThemaximumVBOordVD/dttriggered.WhereadeviceisVRRMallowableins

6、tantaneousforwardorreversetriggeredbyexceedingthebreakdownvoltage,voltageincludingtransients.Theratedvaluesoforbyahighrateofriseofoff-statevoltage,asVDRM(max)andVRRM(max)maybeappliedopposedtoinjectingcurrentintothegate,itiscontinuouslyovertheentireoperatingjunctionnecessarytolimitthed

7、IT/dt.Anoteinthedatatemperaturerange,providedthatthethermalsheetspecifiesthemaximumallowabledIT/dtforresistancebetweenjunctionandambientiskeptthismodeoftriggering.lowenoughtoavoidthepossibilityofthermalrunaway.ThermalratingsCurrentratingsSteadystatethermalresistances.IT(AV)Averageon-s

8、tatec