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1、DTS6503P-Channel30-V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeAccordingtoIEC61249-2-21VDS(V)RDS(on)(Ω)I(A)aQg(Typ.)DAvailable0.053atVGS=-10V-5.1•TrenchFET®PowerMOSFET-305.1nC0.066atVGS=-4.5V-4.1APPLICATIONS•LoadSwitchTSOP-6TopView(4)S16(3)G3mm2534(1,2,5,6)D2.85mmP-C
2、hannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unlessotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-5.1TC=70°C-4.1ContinuousDrainCurrent(TJ=150°C)IDTA=25°C-4.1b,cTA=70°C-3.3b,cAPulsedDrainCurrentIDM-20TC=25°C-2.5ContinuousSour
3、ce-DrainDiodeCurrentTA=25°CIS-1.67b,cTC=25°C3.0TC=70°C2.0MaximumPowerDissipationPDWTA=25°C2.0b,cTA=70°C1.3b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitb,dt≤5sRMaximumJunction-to-AmbientthJA5562.5
4、°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF3441Notes:a.BasedonTC=25°C.b.SurfaceMountedon1"x1"FR4board.c.t=5s.d.MaximumunderSteadyStateconditionsis110°C/W.1DTS6503SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-So
5、urceBreakdownVoltageVDSVGS=0V,ID=-250µA-30VVDSTemperatureCoefficientΔVDS/TJ-31ID=-250µAmV/°CVGS(th)TemperatureCoefficientΔVGS(th)/TJ4.5Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.0-3.0VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=-30V,VGS=0V-1ZeroGateVoltage
6、DrainCurrentIDSSµAVDS=-30V,VGS=0V,TJ=55°C-10On-StateDrainCurrentaID(on)VDS≤-5V,VGS=-10V-20AVGS=-10V,ID=-4.1A0.0400.053Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=-4.5V,ID=-1.0A0.0520.066ForwardTransconductanceagfsVDS=-15V,ID=-4.1A8SDynamicbInputCapacitanceCiss450OutputCa
7、pacitanceCossVDS=-15V,VGS=0V,f=1MHz80pFReverseTransferCapacitanceCrss63VDS=-15V,VGS=-10V,ID=-4.1A1015TotalGateChargeQg5.18nCGate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-4.1A1.8Gate-DrainChargeQgd2.5GateResistanceRgf=1MHz7ΩTurn-OnDelayTimetd(on)4060RiseTimetrVDD=-15V,RL=4.
8、6Ω80120Turn-OffDelayTimetd(off)ID≅-3.3A,VGEN=-4.5V,Rg=1Ω2030FallTimetf1220nsTurn-OnDelayTimetd(on)510RiseTimet
