DTS3409A品牌授权规格书.pdf

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1、DTS3409AP-Channel30V(D-S)MOSFETFEATURESPRODUCTSUMMARY•TrenchFET®PowerMOSFETVDS(V)RDS(on)()Max.I(A)aQg(Typ.)•100%RgTestedD0.036atVGS=-10V-5.6-300.039atVGS=-6V-511.4nC0.044atVGS=-4.5V-4.5APPLICATIONS•ForMobileComputing-LoadSwitch-NotebookAdaptorSwitchSTO-236-DC/DCConverter(SOT-23)GG1

2、3DS2DTopViewP-ChannelMOSFETABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS-30VGate-SourceVoltageVGS±20TC=25°C-5.6TC=70°C-5.1ContinuousDrainCurrent(TJ=150°C)IDb,cTA=25°C-5.4TA=70°C-4.3b,cAPulsedDrainCurrent(t=100µs)IDM-8TC=25°C-2.1Co

3、ntinousSource-DrainDiodeCurrentISTA=25°C-1b,cTC=25°C2.5TC=70°C1.6MaximumPowerDissipationPDWTA=25°C1.25b,cTA=70°C0.8b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,dt5sRthJA75100°C/WM

4、aximumJunction-to-Foot(Drain)SteadyStateRthJF4050Notes:a.BasedonTC=25°C.b.Surfacemountedon1"x1"FR4board.c.t=5s.d.Maximumundersteadystateconditionsis166°C/W.1DTS3409ASPECIFICATIONS(TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVo

5、ltageVDSVGS=0V,ID=-250µA-30VVDSTemperatureCoefficientVDS/TJ-19ID=-250µAmV/°CVGS(th)TemperatureCoefficientVGS(th)/TJ4Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=-250µA-1.2-2.5VGate-SourceLeakageIGSSVDS=0V,VGS=±20V±100nAVDS=-30V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSµAVDS=-30V,VGS

6、=0V,TJ=55°C-5On-StateDrainCurrentaID(on)VDS-5V,VGS=-10V-2.5AVGS=-10V,ID=-4.4A0.0340.036Drain-SourceOn-StateResistanceaRDS(on)VGS=-6V,ID=-4A0.0380.039VGS=-4.5V,ID=-3.6A0.0430.044ForwardTransconductanceagfsVDS=-15V,ID=-3.4A18SDynamicbInputCapacitanceCiss1295OutputCapacitanceCossVDS

7、=-15V,VGS=0V,f=1MHz150pFReverseTransferCapacitanceCrss130VDS=-15V,VGS=-10V,ID=-5.4A2436TotalGateChargeQg11.417nCGate-SourceChargeQgsVDS=-15V,VGS=-4.5V,ID=-5.4A3.4Gate-DrainChargeQgd3.8GateResistanceRgf=1MHz1.57.715.4Turn-OnDelayTimetd(on)1320RiseTimetrVDD=-15V,RL=3.548Turn-OffDela

8、yTimetd(off)ID-4.3