sic固定模拟放射性石墨的-研究

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1、西南科技大学硕士研究生学位论文第1I页AbstractThispaperusegraphitetosimulatetheradioactivegraphite，siliconandgraphiteasrawmaterial，throughthesolidreactionsynthesisofSiCpowder，adoptreactionhotpressingsinteringtechniquetopreparedSiCbody．ThesampleSweretestedusinganalysismeanssuchasX‘raydiffractionfXRD)，scanningelec

2、tronmicroscope(SEM)，electronenergyspectrum(EDS)，specificsurfacearea(BET)，andlaserparticlesizedistribution．StudiestheeffectofSiCpowdersynthesisofthecalcinedtemperature，ballgrindingtime，holdingtimeandSiCseedagent，aswellastheeffectofsinteringSiCsolidbodyofsinteringtemperature，degreeofbodydensity，

3、pressurizationsystem，holdingpressuretime，anddisCUssesthereactionmechanismofSiCsynthesis．Theresuitsshowthat：thesilicon—carbondirectlysynthesizedSiCisheterogeneOUSsolidphasereactioncontrolledbythemutualdiffusionofsiliconandcarbonandsiliconevaporation·diffusion，theevaporation·diffusionofsiliconha

4、sagreatinfluenceonthereactionrateofsynthesisofSiC：svnthesisofSiCreactionrateofhighdensitybodyinthesinteringprocessislow；thesecondphase(Si02)onthesurfaceofsiliconparticleswillseriouslyaffectthemutualdiffusionofsiliconandcarbon，reducethereactionrate；theparticlesizeofsiliconandgraphitewillaffectt

5、heSiCgrainsize，thefinerthematerial’Sparticle，thesmallerthesynthesisofSiCgrains；SiCseedagentaddedhasnosignificanteffectofSiCsynthesis；thebettercalciningconditionsofsiliconandgraphitecompletelyreactionSiCpowderis130℃andheatpreservation120min；inhotpressmgsinteringprocess，adoptthesinteringsystemof

6、thefirstreactionthenpressureisconducivetothesynthesisofSiC；sinteringtemperaturehasagreatinfluenceonthesynthesisofSiC，thehigherthesinteringtemperature，thefasterthereactionrateofsynthesisofSiC，highsinteringtemperature(>1350℃)，cancausealargeamountofsiliconvolatilization10ss；thebettersinteringsyst

7、emofreactionhotpressingsinteringSiCIS●‘⋯●1350℃and6hholdingpressure．西南科技大学硕士研究生学位论文第1ll页Keywords：radioactivegraphite；。silicon；SiC；solidphasereaction；reactionhot-pressing西南科技大学硕士研究生学位论文第1V页目录1绪论．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．