硅纳米线阵列的制备与光伏应用的分析

硅纳米线阵列的制备与光伏应用的分析

ID:33225392

大小:25.80 MB

页数:86页

时间:2019-02-22

硅纳米线阵列的制备与光伏应用的分析_第1页
硅纳米线阵列的制备与光伏应用的分析_第2页
硅纳米线阵列的制备与光伏应用的分析_第3页
硅纳米线阵列的制备与光伏应用的分析_第4页
硅纳米线阵列的制备与光伏应用的分析_第5页
资源描述:

《硅纳米线阵列的制备与光伏应用的分析》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库

1、———————————————』堕堕一AbstractPhotovoltaictechnologyisoneoftheeffectivewaystOsolvetheener譬y嘶SjsandenVlronmentalpollution。Atpresent,crystallinesiliconsolarcellsremaillthebastsofthecurrentphotovoltaicindustry.However,thehighcostofcrystallinesiltconsolarceJJ8hasg

2、reatlyhinderedthedevelopmentofthephotovoltaicindus魄Siliconnanowires(SiNWs)areconsideredaspromisingmaterialstoacbievehigheffictencⅥJowcOStsolarcells,duetotheirexcellentlightabsorbingpropertiesande伍cientcafTlerseparationperformance.Therefore,theresearchonsili

3、connanowirearravsforpnotoVoltaicapplicationsisverymeaningful.Inthispaper,t11eantirenectionpropertiesofSiNWsarray,solarcellperformance,aswellassu—hceDassivationofSiNWsarrayhasbeenresearched.Theresultsweobtainedareasfoilo、vS:(1)mSiNWsarraycanbecreatedbymetal.

4、assistedchemicaletching(MACE)astheAgnanoparticlesfilmverticallysink.Theleng_tllofSiNWsarrayscanberegulatedbyadjustingtheetchingtime.withetchingtimeforsiliconsubstrates,ThelengthsofSiNWsarmyincreaselinearlySiliconnanowirearrayshasalowreflectance(<1%)overawid

5、erange(300-1000nm).TheSiNWarraysoflongerlengthhaVeloWerreflectaIlcemourinvestigatedlengthrange.TheSiNWsolarcellexhibitsahigherpowerconversionefficiencyof8.84%thanthecellbasedonpolishedsiliconwafer,underthesameconditionofcompactcontactofthefrontsurfaceelecn.

6、ode.Wef-oundthatthereasonfortheincreaseofcellefficiency,inadditiontotheexcellentantireflectionpropertiesofSiNWsarrays,istheimprovedlong.wavelengthsunlightabsorptionwhichreducestherecombinationofminoritycarrier.(2)ThelengthoftheSiNWsarraysCanbemanipulatedbya

7、djustingtllereactiontime·FlaereflectancedecreaseswiththeSiNWs’lengthincreasing.Bvcombiningthermaloxidationandhydrofluoricacidtreatment,wecanmaIliDulatetllefillingratioofSiNWs.WiththeSiNWs’fillingratiodecreasing,therefleclancedecreasesatfirst,andthenincrease

8、s.Si/Si02coaxialnanowiresarraycanbeobtainedbythermaloxidationofas-grownSiNWsarray.Theresultsshowmat廿1esilicondioxideshellCannotonlyfurtherreducethereflectanceofSiNWsarray,butalsopasslVatesurfacestateso

当前文档最多预览五页,下载文档查看全文

此文档下载收益归作者所有

当前文档最多预览五页,下载文档查看全文
温馨提示:
1. 部分包含数学公式或PPT动画的文件,查看预览时可能会显示错乱或异常,文件下载后无此问题,请放心下载。
2. 本文档由用户上传,版权归属用户,天天文库负责整理代发布。如果您对本文档版权有争议请及时联系客服。
3. 下载前请仔细阅读文档内容,确认文档内容符合您的需求后进行下载,若出现内容与标题不符可向本站投诉处理。
4. 下载文档时可能由于网络波动等原因无法下载或下载错误,付费完成后未能成功下载的用户请联系客服处理。