基于过采样技术的ΣΔ音频ADC设计

基于过采样技术的ΣΔ音频ADC设计

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时间:2019-05-12

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1、西南交通大学硕士学位论文基于过采样技术的Σ-Δ音频ADC设计姓名:徐双武申请学位级别:硕士专业:微电子学与固体电子学指导教师:白天蕊20080501西南交通大学硕士研究生学位论文第1I页AbstractAnalogtoDigitalConvertersplayanimportantroleinanever—increasingdigitalworld.∑一AADCmainlyconsistbythe∑一△modulatoranddigitaldecimationfilter,basedonoversamplingandnoiseshapingtechniques,∑jAmodulato

2、rpushesmostofthenoiseenergytbhighfrequenciesoutofthesignalbaseband,thenthenoiseenergyisfilteredbythesubsequentdecimationfilter,therebygaininghighSNRandresolution.∑一△ADCwhichtakesadvantageofthemeritsofmodernVLSItechniquessuchashighspeed,highleveloftheintegrated,lowpowerconsumption,andislesssensit

3、ivetoanalogcircuitnon—idealitiesthanNyquistADC,havebeenappliedinhighresolutionrequirement.occasion.Inthisthesis,adoptingtheTop—Downdesignmethod,formthespec,thepin’Sfunction,systemdesign,modeldesign(circuitdesign/registertransferlevelcode),thesimulation,thelayout,tothechip’Stest,andcompletethe16b

4、itsaudio∑一AADCdesign.Theresolutionandbandwidthofthe∑一AADCisdeterminedbymodulation,alsothemodulatoristhekeypartyofthe∑一AADC.Theprincipleofthe∑一AADCarediscussedfirstly,thenthebasictheoryandarchitectureofthe∑一AmodulatoriSintroducedindetail,andgiveouthowtodesignthemodulator1ikeasthereparameters.Inor

5、dertomeetthehighresolutionandotherperformancerequirement,threestagesingleloopfullydifferentialswitchedcapacitorarchitecturewiththreebitsquantizerand128OSRisadoptedinthissystemdesign.Thengiveoutdetailofthekeycircuitsofthemodulatorandsimulationresult,suchassamplingswitch,Operationalamplifiers,CMFB

6、,two—phasenon—overlappingclockgeneratorcircuits,bandgapreference,comparator,quantizerandSOon.Thefollowedishowtodesigndigitaldecimationfilter,likeCICfilter,halfbandfilter,FIRfilterandSOon,alsogiveouttherespecificimplementation,thecorrespondingsimulationresultsandsynthesisnetlist.Finally,theback—e

7、ndchipdesignisdiscussed,includingSynthesisbyDesignCompiler,PlaceandRoutebyAstro,STAbyPrimeTime,PostsimulationbyNCSimulatorandchiptest.西南交通大学硕士研究生学位论文第HI页ThischiphasbeenimplementedintheTSMC1P/5M0.18umN-wellCMOSstandardsilicon

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