欢迎来到天天文库
浏览记录
ID:37506362
大小:353.77 KB
页数:10页
时间:2019-05-24
《微电子工艺原理试题》由会员上传分享,免费在线阅读,更多相关内容在行业资料-天天文库。
1、微电子工艺原理一、单项选择1.Themostcommonreticlereductionratiousedwithstep-and-scanexposuretoolsis()a.1:1and4:1b.1:1and5:1c.4:1and5:1d.4:12.Whichofthefollowingprocessesareperformedinthediffusionarea?Circleallthatapply.()a.wafercleansb.hightemperatureprocessingc.me
2、tallizationd.polishinge.photoresiststripping3.Whatarethethreeproductionareaswherephotoresist-coatedwaferscanbefound?()a.diffusionb.photolithographyc.etchd.implante.thinfilmsf.polish4.Whichofthefollowingisnotacommonproductiontoolinthethinfilmsarea?()a.
3、plasmaresiststripperb.CVDsystemsC.PVDsystemsd.rapidthermalannealsysteme.sputteringsystemf.spin-on-glassdispensesystem5.WhatdoesthetermCMPstandfor?()a.chemicallymodulatedphotostabilizerb.chemicalmechanicalpropellantc.chemicalymanipulatedplasmad.chemica
4、lmechanicalplanarization6.WhatisanothernameforCMP?()a.etchb.implantc.polishd.diffusion7.ThetermWETstandsfor()a.waferetchtechnologyb.wetetchfortitaniumcontanctsc.waferelastomerictreatmentd.waferelectricaltest8.Thedataobtainedfromwafertest/sortisusedto(
5、)a.determinewhichwafersneedtogothroughWET.b.determinewhichwafersneedtogothroughbackgrind.c.determinesthedieyieldforeachwafer.d.calculatecycletimeforwaferproduction.9.Thewaferistestedtwiceinordertodetermineitsproductworthiness()a.onceafterfirstmetaletc
6、handafterthecompletionofthelastwaferprocessstep.b.oncebeforethecontanctetchandafterthecompletionofthewaferprocessflow.c.onceafterthefirstionimplantandafterthecompletionofthewaferprocessflow.d.onceatwafer/testsortandafterdieseparation.10.Thepurposeofth
7、econtanctformationprocessisto()a.insulateallexposedsiliconareasofthewafer.b.formmetalcontactsonallactiveareasofthesilicon.c.createbarriersforchargecarriersbetweentransistors.d.formmetalcontactsonallexposedareasofsilicondioxide.11.Whatarethereasonsfort
8、hethermalannealprocessafterionimplantation?()a.Annealingensuresthatthesiliconisreadytobondwiththeimplantedtungsten.b.AnnealingthewaferafterimplantpreparesthesiliconfortheSTIetchprocessc.Annealdrivesdopantsfurtherintothesiliconandrecrystalizest
此文档下载收益归作者所有