Porous SnO2 hierarchical nanosheets_hydrothermal preparation, growth mechanism, and gas sensing properties

Porous SnO2 hierarchical nanosheets_hydrothermal preparation, growth mechanism, and gas sensing properties

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时间:2019-08-01

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1、ViewArticleOnline/JournalHomepage/TableofContentsforthisissueCrystEngCommDynamicArticleLinksC

2、angCao,YueGuan,YanfengSun*andGeyuLu*Received16thJanuary2011,Accepted1stMarch2011DOI:10.1039/c1ce05073gPorousSnO2hierarchicalarchitecturesweresynthesizedbycalciningtheprecipitatespreparedthroughafacileone-stephydrothermalsynthesismethod.Fieldemissionscanningelectronmicro

3、scopicandtransmissionelectronmicroscopicresultsrevealedthatthesehierarchicalnanostructureswerebuiltfromtwo-dimensionalporousnanosheets.Themorphologyofthepreparedproductscouldbetailoredbychangingtheprecursorconcentrationandreactiontime.Onthebasisofexperimentalresults,apo

4、ssiblemechanismfortheformationofthethree-dimensionalSnO2hierarchicalnanostructurewasspeculated.Moreover,gassensingtestsshowedthatthesensorusingporousSnO2hierarchicalnanosheetsafterannealingat600Cfor2hexhibitedbettergassensingpropertiescomparedwiththesensorbasedonconven

5、tionallypreparedSnO2nanoparticles.Theenhancementingassensingpropertieswasattributedtotheiruniquestructures.Introduction(Eg¼3.6eV,at300K),isanimportantn-typesemiconductorthathasoutstandingpropertiesenablingitsapplicationingasInrecentyears,greatattentionhasbeenfocusedonth

6、esynthesissensing,20photocatalysis,21andphotovoltaics.22Itiswellknownofcomplexmicro/nanoarchitectures,especiallytothree-dimen-thatboththesizeandmorphologyhaveaninfluenceonthesional(3D)hierarchicalarchitecturesthatareassembledusing23–25propertiesofthesemiconductoroxides.T

7、heuniquestruc-1Dand2Dnanoscalebuildingblocks.Todate,awidevarietyofturesmayshownewpropertiesandpromisingapplicationsinfunctionalmaterialswithhierarchicalstructurecanprovidemoremanyfields.Thus,overthepastdecades,severalgroupshaveopportunitiesforexploringnovelpropertiesands

8、uperiordevicesynthesizedSnO2micro-andnanostructureswithdifferentperformances,1–3duetotheirhigherspecificareaand

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