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1、Letterpubs.acs.org/NanoLettQuantumDotsatRoomTemperatureCarvedoutfromFew-LayerGraphene,†,‡††AmeliaBarreiro,*HerreS.J.vanderZant,andLievenM.K.Vandersypen†KavliInstituteofNanoscience,DelftUniversityofTechnology,Lorentzweg1,2628CJDelft,TheNetherlands‡DepartmentofPhysics,ColumbiaUniversity,NewYork,NewY
2、ork10027,UnitedStates*SSupportingInformationABSTRACT:Wepresentgraphenequantumdotsendowedwithadditionenergiesaslargeas1.6eV,fabricatedbythecontrolledruptureofagraphenesheetsubjectedtoalargeelectroncurrentinair.Thesizeofthequantumdotislandsisestimatedtobeinthe1nmrange.Thelargeadditionenergiesallowfo
3、rCoulombblockadeatroomtemperature,withpossibleapplicationtosingle-electrondevices.KEYWORDS:Graphene,quantumdots,quantumtransport,single-electrontransistors,moleculartransportrapheneisaone-atom-thickplanarsheetofsp2-bondedcanbeaslargeas1.6eV.TheirformationreliesontheGcarbonatomswhoseshapecanbestruc
4、turedbymeansofcontrolledruptureofafew-layergraphenesheetsubjectedtoastandardtop-downfabricationtechniques,representingalargeelectroncurrent.Simpleestimatesshowthatthesizeofsimpleandscalableapproachtorealizeelectronicdevices.thecharge-carrierislandofthesequantumdotsliesinthe1nmIndeed,oneofthemostap
5、pealingresearchdirectionsinvolvingrange.grapheneisitsuseasthebasematerialforelectroniccircuitryWestartbybrieflydescribingourfabricationtechnique.Few-1,2layergrapheneflakes(between3and18nmthick)arethatisenvisagedtoconsistofnanometer-sizedelements.Forthispurpose,graphenenanoribbonshavecapturedwidespre
6、addepositedbymechanicalexfoliationofkishgraphite(Toshiba3−11Ceramics)ondegeneratelydopedsiliconsubstratescoatedwithattention.Also,quantumdot(QD)devicesmadeentirelyfromgrapheneareconsidered,withpossibleapplicationsto280nmofthermalsiliconoxide.Fortheexfoliation,weuse12,13standardwaferprotectiontape,
7、asitleaveslittleadhesivesingle-electrontransistorsandsupersensitiveelectrometry.MostQDsreportedtodateoperateatcryogenictemper-residueonsubstrates.Electrodesarepatternedontopofatures,whichlimitstheiruseinapplicati
