CMOS工艺技术

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1、CMOS工艺技术CMOS工艺流程∶CSMC-HJWaferFabricationProcessTechnologyCMOSCMOSStartingwithasiliconwaferCrossSectionoftheSiliconWaferMagnifyingtheCrossSectionCMOSn/p-wellFormationGrowThinOxideDepositNitrideDepositResistsiliconsubstrateUVExposureDevelopResistEtchNitriden-wellImplantRemoveResist

2、CMOSn/p-wellFormationsiliconsubstrateGrowOxide(n-well)RemoveNitridep-wellImplantRemoveOxideTwin-wellDrive-inp-welln-wellRemoveDrive-InOxidesiliconsubstratep-welln-wellCMOSLOCOSIsolationGrowThinOxideDepositNitrideDepositResistUVExposureDevelopResistEtchNitrideRemoveResistCMOSLOCOS

3、Isolationsiliconsubstratep-welln-wellDepositResistUVExposureDevelopResistFieldImplantBRemoveResistGrowFieldOxideFoxRemoveNitrideRemoveOxidesiliconsubstratep-welln-wellGrowScreenOxideCMOSTransistorFabricationVtImplantDepositResistUVExposureDevelopResistPunchthroughImplantRemoveRes

4、istRemoveOxideFoxsiliconsubstratep-welln-wellGrowGateOxideCMOSTransistorFabricationDepositPolySiPolySiImplantpolySipolySiDepositResistUVExposureDevelopResistEtchPolySiRemoveResistFoxsiliconsubstratep-welln-wellCMOSTransistorFabricationDepositThinOxideDepositResistUVExposureDevelo

5、pResistn-LDDImplantRemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp-LDDImplantRemoveResistDepositSpacerOxideEtchSpacerOxideFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExpos

6、ureDevelopResistn+S/DImplantn+n+RemoveResistFoxpolySipolySisiliconsubstratep-welln-wellCMOSTransistorFabricationDepositResistUVExposureDevelopResistp+S/DImplantp+p+RemoveResistFoxpolySipolySin+n+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepositBPTEOSBPTEOSBPSGReflowPl

7、anarizationEtchbackDepositResistUVExposureDevelopResistContactEtchbackRemoveResistFoxpolySipolySin+n+p+p+siliconsubstratep-welln-wellCMOSContacts&InterconnectsDepostMetal1Metal1DepositResistUVExposureDevelopResistEtchMetal1RemoveResistFoxpolySipolySip+p+n+n+BPTEOSsiliconsubstrate

8、p-welln-wellCMOSContacts&InterconnectsDe