资源描述:
《Swarup Bhunia, Saibal Mukhopadhyay - Low-Power Variation-Tolerant Design in Nanometer Silicon》由会员上传分享,免费在线阅读,更多相关内容在学术论文-天天文库。
1、Low-PowerVariation-TolerantDesigninNanometerSiliconSwarupBhunia·SaibalMukhopadhyayEditorsLow-PowerVariation-TolerantDesigninNanometerSilicon123EditorsSwarupBhuniaSaibalMukhopadhyayDepartmentofElectricalEngineeringSchoolofElectricalandandComputerScienceCompu
2、terEngineeringCaseWesternReserveUniversityGeorgiaInstituteofTechnologyCleveland,OH44106-7071,USAAtlanta,GA30332-0250,USAskb21@case.edusaibal@ece.gatech.eduISBN978-1-4419-7417-4e-ISBN978-1-4419-7418-1DOI10.1007/978-1-4419-7418-1SpringerNewYorkDordrechtHeidel
3、bergLondonLibraryofCongressControlNumber:2010938792©SpringerScience+BusinessMedia,LLC2011Allrightsreserved.Thisworkmaynotbetranslatedorcopiedinwholeorinpartwithoutthewrittenpermissionofthepublisher(SpringerScience+BusinessMedia,LLC,233SpringStreet,NewYork,N
4、Y10013,USA),exceptforbriefexcerptsinconnectionwithreviewsorscholarlyanalysis.Useinconnectionwithanyformofinformationstorageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilarmethodologynowknownorhereafterdevelopedisforbidden.Theuseint
5、hispublicationoftradenames,trademarks,servicemarks,andsimilarterms,eveniftheyarenotidentifiedassuch,isnottobetakenasanexpressionofopinionastowhetherornottheyaresubjecttoproprietaryrights.Printedonacid-freepaperSpringerispartofSpringerScience+BusinessMedia(ww
6、w.springer.com)PrefaceTheenergyrequiredforrunningintegratedcircuits(ICs)isincreasingineverynewgenerationofelectronicsystems.AtthesametimethemanufacturingprocessusedtobuildtheseICsarebecominglessdeterministic.Hence,low-powerdesignunderlargeparametervariation
7、shasemergedasanimportantchallengeinthenanometerregime.Thebook,forthefirsttime,integratesdescriptionoflowpowerandvaria-tionissuesandprovidesdesignsolutionstosimultaneouslyachievelowpowerandrobustoperationundervariations.Designconsiderationsforlowpowerandrobus
8、tnesswithrespecttovariationstypicallyimposecontradictoryrequirements.Powerreductiontechniquessuchasvoltagescaling,dual-thresholdassignmentandgatesizingcanhavelargenega-tiveimpactonparametricyieldunderp