CMOS超大规模集成电路设计课件.ppt

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1、Lecture1:Circuits&Layout11:Circuits&LayoutOutlineABriefHistoryCMOSGateDesignPassTransistorsCMOSLatches&Flip-FlopsStandardCellLayoutsStickDiagrams21:Circuits&LayoutABriefHistory1958:FirstintegratedcircuitFlip-flopusingtwotransistorsBuiltbyJackKilbyatTexasInstruments2010IntelCorei7mprocesso

2、r2.3billiontransistors64GbFlashmemory>16billiontransistorsCourtesyTexasInstruments[Trinh09]©2009IEEE.31:Circuits&LayoutGrowthRate53%compoundannualgrowthrateover50yearsNoothertechnologyhasgrownsofastsolongDrivenbyminiaturizationoftransistorsSmallerischeaper,faster,lowerinpower!Revolutionary

3、effectsonsociety[Moore65]ElectronicsMagazine41:Circuits&LayoutAnnualSales>1019transistorsmanufacturedin20081billionforeveryhumanontheplanet51:Circuits&LayoutInventionoftheTransistorVacuumtubesruledinfirsthalfof20thcenturyLarge,expensive,power-hungry,unreliable1947:firstpointcontacttransist

4、orJohnBardeenandWalterBrattainatBellLabsSeeCrystalFirebyRiordan,HoddesonAT&TArchives.Reprintedwithpermission.61:Circuits&LayoutTransistorTypesBipolartransistorsnpnorpnpsiliconstructureSmallcurrentintoverythinbaselayercontrolslargecurrentsbetweenemitterandcollectorBasecurrentslimitintegrati

5、ondensityMetalOxideSemiconductorFieldEffectTransistorsnMOSandpMOSMOSFETSVoltageappliedtoinsulatedgatecontrolscurrentbetweensourceanddrainLowpowerallowsveryhighintegration71:Circuits&Layout1970’sprocessesusuallyhadonlynMOStransistorsInexpensive,butconsumepowerwhileidle1980s-present:CMOSproc

6、essesforlowidlepowerMOSIntegratedCircuitsIntel1101256-bitSRAMIntel40044-bitmProc[Vadasz69]©1969IEEE.IntelMuseum.Reprintedwithpermission.81:Circuits&LayoutMoore’sLaw:Then1965:GordonMooreplottedtransistoroneachchipFitstraightlineonsemilogscaleTransistorcountshavedoubledevery26monthsIntegrati

7、onLevelsSSI:10gatesMSI:1000gatesLSI:10,000gatesVLSI:>10kgates[Moore65]ElectronicsMagazine91:Circuits&LayoutAndNow…101:Circuits&LayoutFeatureSizeMinimumfeaturesizeshrinking30%every2-3years111:Circuits&LayoutCorollariesManyotherfactorsgrowexponentiallyEx:clockfr