IC封装流程介绍.ppt

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1、IC封裝簡介內容現有的IC封裝型式(PackageType)介紹製造流程(ProcessFlow)介紹材料組成(BOM)介紹封裝形式的定義DIP:DualIn-linePackageSOP:SmallOutlinePackageSOJ:SmallOutlineJ-leadPackageSSOP:ShrinkSOPTSOP:ThinSOP(inc.typeI&II)QFP:QuadFlatPackageLQFP:LowprofileQFPBGA:BallGridArrayDIP:DualIn-line

2、Package腳數:28現有的IC封裝型式(PackageType)現有的IC封裝型式(PackageType)SOP:SmallOutlinePackage腳數:8/18/32/44現有的IC封裝型式(PackageType)SOJ:SmallJ-leadPackage腳數:24/42現有的IC封裝型式(PackageType)SSOP:ShrinkSmallOutlinePackage腳數:48現有的IC封裝型式(PackageType)TSOP-I:ThinSOPtype-I腳數:28/32/

3、48現有的IC封裝型式(PackageType)TSOP-II:ThinSOPtype-II腳數:40/44/50/54/66/86現有的IC封裝型式(PackageType)QFP:QuadFlatPackage腳數:100/128/160/208現有的IC封裝型式(PackageType)LQFP:LowprofileQFP腳數:48/64/100/128/176/208/216現有的IC封裝型式(PackageType)BGA:BallGridArray尺寸:27x27/35x35製造流程(P

4、rocessFlow)介紹-前段製造流程(ProcessFlow)介紹-後段進料檢驗IQC(IncomingQualityControl)晶片黏片WaferMount(WM)晶粒切割WaferSaw(WS)導線架(花架)晶粒銀膠黏粒DieBond(DB)頭髮金線銲線WireBond(WB)壓模Molding(M/D)切腳前切腳De-junk&Trim(DT)電鍍Plating(PL)油墨(ink)雷射(laser)蓋印Marking成型及切單Forming&Singulation(F/S)1.花架(

5、Leadframe)2.銀膠(Epoxy)3.金線(Goldwire)4.膠餅(Compound)*5.黃膠(Polyimide)*6.散熱片(HeatSink)*前四項為四大主料.材料組成(BOM)BillOfMaterial花架(導線架)Leadframe(L/F)常用種類(type):1.銅材(Cu):C7025,A-194,E-64T2.鐵材(Fe):A-42銀膠Epoxy常用種類(type):1.Ablebond8360forQFP/SOIC2.Ablebond8355FforTSOP&

6、LQFP3.Ablebond8340forTSOP&LQFP4.HitachiEN4065DforTSOP&LQFP5.Ablebond8515forinsulator(絕緣)成份:99.99%Au常用線徑:1.1.3milforbondpitch90um以上.2.1.2milforbondpitch80um以上.3.1.0milforbondpitch70~79um.4.0.9milforbondpitch69um以下.金線GoldWire主要成份:1.填充料Filler(SiO2):約70%

7、2.合成樹脂Resin:25~29%常用型號:1.EME6300/6600forQFP&SOIC2.EME7351LS/KMC260forTSOP3.EME7320ARforLQFP膠餅Compound[後段](8)壓模Mold(9)烘烤PMC(10)去緯DT(11)電鍍Plating(12)油墨蓋印InkMarking(13)烘烤InkCure(14)切腳成型TrimForm(15)包裝PACKLeadFrameAssemblyProcess[前段](1)晶片檢驗WaferIncoming(2)晶

8、片粘片UVTapeMount(3)晶片切割Saw(4)UV照射UVirradiation(5)粘晶粒DieBond(6)烘烤EpoxyCure(7)銲線WireBondWaferIncomingUVirradiationWaferMountSawPMCDTMoldDieBondPlatingWireBondEpoxyCureTrimFormInkCureInkMarkingPACKLeadFrameAssemblyProcessFlowChart晶片粘片(UV)Waf