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1、HighPerformance45-nmSOITechnologywithEnhancedStrain,PorousLow-kBEOL,andImmersionLithographyS.Narasimha,K.Onishi,H.M.Nayfeh,A.Waite^,M.Weybright,J.Johnson,C.Fonseca,D.Corliss,C.Robinson,M.Crouse,D.Yang,C-H.J.Wu,A.Gabor,T.Adam,I.Ahsan,M.Belyansky,L.Black^,S.Butt,J.Cheng^
2、,A.Chou,G.Costrini,C.Dimitrakopoulos,A.Domenicucci,P.Fisher^,A.Frye,S.Gates,S.Greco,S.Grunow,M.Hargrove^,J.Holt,S-J.Jeng,M.Kelling^,B.Kim,W.Landers,G.Larosa,D.Lea,M.H.Lee,X.Liu,N.Lustig,A.McKnight,L.Nicholson,D.Nielsen,K.Nummy,V.Ontalus,C.Ouyang,X.Ouyang,C.Prindle^,R.P
3、al^,W.Rausch,D.Restaino,C.Sheraw,J.Sim,A.Simon,T.Standaert,C.Y.Sung,K.Tabakman,C.Tian,R.VanDenNieuwenhuizen^,H.VanMeer^,A.Vayshenker,D.Wehella-Gamage,J.Werking^,R.C.Wong,J.Yu,S.Wu,R.Augur^,D.Brown^,X.Chen,D.Edelstein,A.Grill,M.Khare,Y.Li,S.Luning^,J.Norum,S.Sankaran,D.
4、Schepis,R.Wachnik,R.Wise,C.Wann,T.Ivers,P.Agnello^IBMSystemsandTechnologyGroup,AdvancedMicroDevicesInc.IBMSemiconductorResearchandDevelopmentCenter(SRDC),HopewellJunction,NY12533contact:snaras@us.ibm.com2070Route52MS42JHopewellJunction,NY12533Tel845-894-2208AbstractAta
5、fixedNA,immersionenablesadepthoffocusimprovementof~2Xfortheactivesiliconlevel(Fig3).ThisWepresenta45-nmSOICMOStechnologythatfeatures:i)allowsforasubstantial(>40%)reductioninthewidthaggressiveground-rule(GR)scalingenabledbyvariationofnarrowchannelSRAMFETs.Inaddition,the
6、1.2NA/193nmimmersionlithography,ii)high-performanceimprovedexposurelatitudeanddecreasedmaskerrorfactorFETresponseenabledbytheintegrationofmultipleassociatedwith1.2NAimmersionreducetheacross-chipadvancedstrainandactivationtechniques,iii)afunctionalgatelengthvariationby~
7、20%.TargetedlithographysectorSRAMwithcellsizeof0.37µm2,andiv)aporouslow-koptimizationsfortheimmersionprocesshaveresultedin(k=2.4)dielectricforminimizedback-endwiringdelay.Thedefectlevelsequivalenttoourdrylithographybaseline(FiglistofFET-specificperformanceelementsinclu
8、desenhanced4).dual-stressliner(DSL),advancedeSiGe,stressmemorization(SMT),andadvancedanneal(AA).TheresultingB.SRAMEva
