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1、thFifthInternationalSymposiumonAdvancedScienceandTechnologyofSiliconMaterials(JSPSSiSymposium)Nov10-14KonaHawaiiUSARecentProgressinSiliconPhotonicsMarioPaniccia¹,LingLiao¹,BrianR.Koch¹,AnshengLiu¹,AlexanderW.Fang²,RichardJones¹,EricaLively²,YoelChetrit³,JuthikaBasak¹,HatHguyen¹,DoronRubi
2、n³,DiLiang²,Ying-HauKuo²,JohnE.Bowers²¹IntelCorporation,SantaClara,CA,USA²UniversityofCalifornia,SantaBarbara,CA,USA³NumonyxIsraelLtd.,QiryatGat82109,IsraelE-mail:Mario.paniccia@intel.comAbstractSiliconPhotonicshasemergedasapromisingtechnologyforlowcostcommunicationinandaroundthedatacant
3、erandaroundthePC.Integratedtransmittersandreceiverswith1Tb/stransmitandreceiveratesareexamplesofthehighperformancedevicesthatarefeasibleusingasiliconphotonicsplatform.Anintegrated1Tb/stransmittercanbegeneratedbyusingawaveguidebasedwavelengthdivisionmultiplexertocombine25lasersignalsatdif
4、ferentwavelengths,eachencodedwith40Gb/sdatabyasiliconmodulator.A1Tb/sreceiverispossiblebyusingawavelengthdivisiondemultiplexerconnectedtoanarrayof25photodetectorseachreceiving40Gb/sdata.Atthispointintime,infactallofthesecomponentshavebeendemonstratedindividuallyonasiliconplatformthatallo
5、wsfortheirintegrationtogether.HerewepresentrecentresultsinSiliconPhotonicsresearchatIntelCorporation.Oneofthoseresultsisasiliconphotonicchipcapableoftransmittingdataatanaggregaterateof200Gb/s.Itisbasedonwavelengthdivisionmultiplexingwhereanarrayofeighthighspeedsiliconopticalmodulatorsare
6、monolithicallyintegratedwithademultiplexerandamultiplexer.Themodulators,eachcapableof25Gb/sdatatransmission,arebasedonthecarrierdepletioneffectofpndiodes,andthedemultiplexer/multiplexerisbasedonacascadedasymmetricMachZehnderinterferometerdesign.Thesecondresultdiscussedhereisanadvanceinou
7、rhybridlasertechnologyfrontinvolvingtheuseofsurfacecorrugatedgratingsonsilicontomakesinglewavelengthlasers.Theselasershave50dBsidemodesuppressionratioand8mWoutputpoweratroomtemperature,suitableforwavelengthdivisionmultiplexingapplicationsandlongdistancetransmission.200Gb/
