DTC9058规格书最新版.pdf

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1、DTC9058N-Channel100V(D-S)MOSFETFEATURESMOSFETPRODUCTSUMMARY®•TrenchFETPowerMOSFETVDS(V)RDS(on)()Max.I(A)aQg(Typ.)•100%RgandUISTestedD0.126atVGS=10V3.1•Materialcategorization:1000.134atVGS=6V2.92.9nC0.139atVGS=4.5V2.6APPLICATIONS•DC/DCConverters/BoostConverters•LoadSwitch•LEDBacklightinginLC

2、DTVsD•PowerManagementforMobileComputingDGSGDSN-ChannelMOSFETABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS100VGate-SourceVoltageVGS±20TC=25°C3.1TC=70°C2.5ContinuousDrainCurrent(TJ=150°C)IDTA=25°C2.2b,cTA=70°C1.8b,cAPulsedDrainCurrent(t=300µ

3、s)IDM8TC=25°C2.1ContinuousSource-DrainDiodeCurrentISTA=25°C1b,cSinglePulseAvalancheCurrentIAS3L=0.1mHSinglePulseAvalancheEnergyEAS0.45mJTC=25°C2.5TC=70°C1.6MaximumPowerDissipationPDWTA=25°C1.25b,cTA=70°C0.8b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CTHERMALRESISTANCERATING

4、SParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambientb,d5sRthJA75100°C/WMaximumJunction-to-Foot(Drain)SteadyStateRthJF4050Notes:a.BasedonTC=25°C.b.Surfacemountedon1"x1"FR4board.c.t=5s.23553Q68872黄R1376032电5070d.Maximumundersteadystateconditionsis166°C/W.1DTC9058MOSFETSPECIFICATIONS(

5、TJ=25°C,unlessotherwisenoted)ParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250µA100VVDSTemperatureCoefficientVDS/TJ59ID=250µAmV/°CVGS(th)TemperatureCoefficientVGS(th)/TJ-4.8Gate-SourceThresholdVoltageVGS(th)VDS=VGS,ID=250µA1.23VGate-SourceLeaka

6、geIGSSVDS=0V,VGS=±20V±100nAVDS=100V,VGS=0V-1ZeroGateVoltageDrainCurrentIDSSµAVDS=100V,VGS=0V,TJ=55°C-10On-StateDrainCurrentaID(on)VDS5V,VGS=10V5AVGS=10V,ID=2A0.1120.126Drain-SourceOn-StateResistanceaRDS(on)VGS=6V,ID=1A0.1200.134VGS=4.5V,ID=1A0.1350.139ForwardTransconductanceagfsVDS=20V,ID

7、=2A5SDynamicbInputCapacitanceCiss196OutputCapacitanceCossVDS=50V,VGS=0V,f=1MHz67pFReverseTransferCapacitanceCrss14VDS=50V,VGS=10V,ID=2.2A5.210.4TotalGateChargeQg2.95.8nCGate-SourceChargeQgsVDS=50V,VGS=4.5V,ID=2.2A1Gate-DrainChargeQgd1.4GateResistan