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1、DTC2058N-Channel20-V(D-S)MOSFETFEATURESPRODUCTSUMMARY•Halogen-freeVDS(V)RDS(on)(Ω)I(A)aQg(Typ.)®D•TrenchFETPowerMOSFET0.033atVGS=4.5V6.8RoHS2010nCCOMPLIANT0.045atVGS=2.5V6.8APPLICATIONS•LoadSwitchesforPortableDevicesDDGSGDSN-ChannelMOSFETABSOLUTEMAXIMUMRATINGSTA=25°C,unl
2、essotherwisenotedParameterSymbolLimitUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±12TC=25°C6.8aTC=70°C6aContinuousDrainCurrent(TJ=150°C)IDTA=25°C6.8a,b,cTA=70°C6a,b,cAPulsedDrainCurrentIDM30TC=25°C5.2ContinuousSource-DrainDiodeCurrentISTA=25°C2.1b,cTC=25°C6.3TC=70°
3、C4MaximumPowerDissipationPDWTA=25°C2.5b,cTA=70°C1.6b,cOperatingJunctionandStorageTemperatureRangeTJ,Tstg-55to150°CSolderingRecommendations(PeakTemperature)e,f260THERMALRESISTANCERATINGSParameterSymbolTypicalMaximumUnitMaximumJunction-to-Ambienta,c,dt≤5sRthJA4050°C/WMaxim
4、umJunction-to-Foot(Drain)SteadyStateRthJF1520Notes:a.Packagelimited,TC=25°C.b.SurfaceMountedon1"x1"FR4board.c.t=10s.23553Q68872黄R1376032电5070d.MaximumunderSteadyStateconditionsis95°C/W.e.SeeReliabilityManualforprofile.TheChipFETisaleadlesspackage.Theendoftheleadterminali
5、sexposedcopper(notplated)asaresultofthesingulationprocessinmanufacturing.Asolderfilletattheexposedcoppertipcannotbeguaranteedandisnotrequiredtoensureadequatebottomsidesolderinterconnection.f.ReworkConditions:manualsolderingwithasolderingironisnotrecommendedforleadlesscom
6、ponents.1DTC2058SPECIFICATIONSTJ=25°C,unlessotherwisenotedParameterSymbolTestConditionsMin.Typ.Max.UnitStaticDrain-SourceBreakdownVoltageVDSVGS=0V,ID=250µA20VVDSTemperatureCoefficientΔVDS/TJ25ID=250µAVGS(th)TemperatureCoefficientΔVGS(th)/TJ-4.0mV/°CGate-SourceThresholdVo
7、ltageVGS(th)VDS=VGS,ID=250µA0.61.5VGate-SourceLeakageIGSSVDS=0V,VGS=±12V±100nAVDS=20V,VGS=0V1ZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V,TJ=55°C10µAOn-StateDrainCurrentaID(on)VDS≥5V,VGS=4.5V30AVGS=4.5V,ID=8.3A0.0260.033Drain-SourceOn-StateResistanceaRDS(on)ΩVGS=2.5V,ID
8、=4.5A0.0300.045ForwardTransconductanceagfsVDS=10V,ID=8.3A45SDynamicbInputCapacitanceCiss1200OutputCapac
