Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf

Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf

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Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf_第1页
Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf_第2页
Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf_第3页
Quantum spin Hall effect and topological phasetransition in InNx量子自旋霍尔效应与拓扑相位 InNxBi YSB1~X-Y_InSb量子威尔斯地跃迁.pdf_第4页
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1、PAPER•OPENACCESSRelatedcontent-MagnetoconductanceinInN/GaNquantumQuantumspinHalleffectandtopologicalphasewellsintopologicalinsulatorphaseW.Bardyszewski,D.RodakandS.P.transitioninInNxBiySb1−x−y/InSbquantumwellsepkowski-TopologicalmaterialsBinghaiYanandShou-ChengZhangTocitethisart

2、icle:ZhigangSongetal2017NewJ.Phys.19073031-QuantumanomalousHalleffectintime-reversal-symmetrybreakingtopologicalinsulatorsCui-ZuChangandMingdaLiViewthearticleonlineforupdatesandenhancements.ThiscontentwasdownloadedfromIPaddress61.174.132.238on15/08/2018at05:53NewJ.Phys.19(2017)0

3、73031https://doi.org/10.1088/1367-2630/aa795cPAPERQuantumspinHalleffectandtopologicalphasetransitioninOPENACCESSInNxBiySb1−x−y/InSbquantumwellsRECEIVED19January2017ZhigangSong1,2,3,SumantaBose1,4,WeijunFan1,4,5,6,DaoHuaZhang1,4,5,YanYangZhang2,3andREVISEDShuShenLi2,316May20171Sc

4、hoolofElectricalandElectronicEngineering,NanyangTechnologicalUniversity,50NanyangAvenue,Singapore639798,SingaporeACCEPTEDFORPUBLICATION2StateKeyLaboratoryforSuperlatticesandMicrostructures(SKLSM),InstituteofSemiconductors,ChineseAcademyofSciences,POBox14June2017912,Beijing100083

5、,PeopleʼsRepublicofChinaPUBLISHED3SynergeticInnovationCenterofQuantumInformationandQuantumPhysics,UniversityofScienceandTechnologyofChina,Hefei,25July2017Anhui230026,PeopleʼsRepublicofChina4OPTIMUS,CentreforOptoElectronicsandBiophotonics,NanyangTechnologicalUniversity,50NanyangA

6、venue,Singapore639798,OriginalcontentfromthisSingaporeworkmaybeusedunder5LUMINOUS!CentreofExcellenceforSemiconductorLighting&Displays,NanyangTechnologicalUniversity,Singapore639798,thetermsoftheCreativeCommonsAttribution3.0Singapore6licence.Authortowhomanycorrespondenceshouldbea

7、ddressed.AnyfurtherdistributionofE-mail:ewjfan@ntu.edu.sgandedhzhang@ntu.edu.sgthisworkmustmaintainattributiontotheKeywords:quantumspinHalleffect,topologicalinsulator,quantumwell,k·pmethodauthor(s)andthetitleofthework,journalcitationandDOI.AbstractQuantumspinHall(QSH)effect,afun

8、damentallynewquantumstateofmatterandtopological

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