半导体封装制程及其设备介绍上课讲义.ppt

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1、半导体封装制程与设备材料知识简介PrepareBy：WilliamGuo2007.11Update半导体封装制程概述半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）－封装后段（MARK-PLANT）－测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。封裝型式(PACKAGE)ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)8~64DIPDualIn

2、-linePackagePlastic2.54mm(100miles)1directionlead3~25SIPSingleIn-linePackage封裝型式ThroughHoleMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic2.54mm(100miles)1directionlead16~24ZIPZigzagIn-linePackagePlastic1.778mm(70miles)20~64S-DIPShrinkDualIn-linePackage封裝型式ThroughHoleMountShapeMateri

3、alLeadPitchNoofI/OTypicalFeaturesCeramicPlastic2.54mm(100miles)half-sizepitchinthewidthdirection24~32SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54mm(100miles)PBGAPinGridArray封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesPlastic1.27mm(50miles)2directionlead8~40SOPSmallOutlineP

4、ackagePlastic1.0,0.8,0.65mm4directionlead88~200QFPQuad-FlatPack封裝型式SurfaceMountShapeMaterialLeadPitchNoofI/OTypicalFeaturesCeramic1.27,0.762mm(50,30miles)2,4directionlead20~80FPGFlatPackageofGlassCeramic1.27,1.016,0.762mm(50,40,30miles)20~40LCCLeadlessChipCarrier封裝型式SurfaceMountShapeMaterialL

5、eadPitchNoofI/OTypicalFeaturesCeramic1.27mm(50miles)j-shapebend4directionlead18~124PLCCPlasticLeadedChipCarrierCeramic0.5mm32~200VSQFVerySmallQuadFlatpackAssemblyMainProcessDieCure(Optional)DieBondDieSawPlasmaCardAsyMemoryTestCleanerCardTestPackingforOutgoingDetaping(Optional)Grinding(Optiona

6、l)Taping(Optional)WaferMountUVCure(Optional)LasermarkPostMoldCureMoldingLaserCutPackageSawWireBondSMT(Optional)半导体设备供应商介绍-前道部分半导体设备供应商介绍-前道部分常用术语介绍SOP-StandardOperationProcedure标准操作手册WI–WorkingInstruction作业指导书PM–PreventiveMaintenance预防性维护FMEA-FailureModeEffectAnalysis失效模式影响分析SPC-StatisticalPr

7、ocessControl统计制程控制DOE-DesignOfExperiment工程试验设计IQC/OQC-Incoming/OutingQualityControl来料/出货质量检验MTBA/MTBF-MeanTimebetweenassist/Failure平均无故障工作时间CPK-品质参数UPH-UnitsPerHour每小时产出QC7Tools(QualityControl品管七工具)OCAP(OutofControlActionPlan异常改善计划)8D(问题解决八大步