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1、上海交通大学硕士学位论文RESEARCHONMETALLINEVOIDIN55NMTECHNOLOGYBACK-ENDPROCESSINTEGATIONABSTRACTMetalhardmaskDualDamascusAllinOneintegrationprocesshasbeenwidelyusedin55nmICmanufacturingprocess,whichsolvesthecornerroundingontopoflow-Kdielectric,thinnerthicknessoflow-Kbetweentrenchesandsm
2、allersidewallangleissuewiththetraditionalDualDamasceneprocess,buttherearealsosomenewaccompanyingissuesanddefects,suchasthemetalvoidfoundinthetechnologydevelopmentprocess.Thismetalvoidwillcauselargermetallinesheetresistancetoincreasethecapacityresistancedelayduringsignaltrans
3、missioninmetallinesandblockthesignaltransmission,whichwillresultinmetallineopeninworstcasestocutoffthesignaltransmission.Atthesametime,themetallinevoidwillcauseseriousreliabilityproblems,suchasstressmigrationandelectromigration.Inthispaper,theoccurrenceconditionofmetallinevo
4、idaswellasthedefectevolutionprocesswassummerizedthroughtheinvestigationofenvironmentalfactorsdefectgeneratedanddefectstepbystepcheck,androotcauseofmetallinevoidwasspecified.Thestressofmetalhardmaskmakesthebendingofdielectriclayerandsmallertrenchopeningbetweenmetallines,which
5、causedtheresultthatcoppercannotbedepositedintotrenchtoformvoidincopperelectroplatingdepositionprocess.Threeprocessmodificationmethodswereproposedtoeliminatethemetallinevoid,thatis,thelithopatternsizeadjustment,zero-biasetchingandreducingthemetalhardmaskstress,amongwhichreduc
6、ingthemetalhardmaskstressprocessisthemostdirectandeffective.KEYWORDS:ICsemiconductorprocess,metallinevoid,metalhardmask,stressII万方数据上海交通大学硕士学位论文目录第一章绪论·······················································································11.1课题研究背景···························
7、··················································11.1.1MOS技术发展回顾·································································11.1.255纳米后段引入金属硬掩模层的双大马士革一体化工艺··················41.2课题研究内容和拟解决的关键问题·················································121.3课题的研究方法、设计及试验方案········
8、·········································13第二章55纳米后段工艺集成中出现的空洞问题···········
